Predictions about the behaviour of diamond, silicon, SiC and some AIIIBV semiconductor materials in hadron fields

摘要

The utilisation of crystalline semiconductor materials as detectors anddevices operating in high radiation environments, at the future particlecolliders, in space applications, in medicine and industry, makes necessary toobtain radiation harder materials. Diamond, SiC and different AIIIBV compounds(GaAs, GaP, InP, InAs, InSb) are possible competitors for silicon to differentelectronic devices for the up-mentioned applications. The main goal of thispaper is to give theoretical predictions about the behaviour of thesesemiconductors in hadron fields (pions, protons). The effects of theinteraction between the incident particle and the semiconductor arecharacterised in the present paper both from the point of view of theprojectile, the relevant quantity being the energy loss by nuclearinteractions, and of the target, using the concentration of primary radiationinduced defects on unit particle fluence. Some predictions about the damageinduced by hadrons in these materials in possible applications in particlephysics and space experiments are done.